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1 of 11 optimum technology matching? applied gaas hbt ingap hbt gaas mesfet sige bicmos si bicmos sige hbt gaas phemt si cmos si bjt gan hemt functional block diagram rf micro devices?, rfmd?, optimum technology matching?, enabling wireless connectivity?, powerstar?, polaris? total radio? and ultimateblue? are trademarks of rfmd, llc. bluetooth is a trade- mark owned by bluetooth sig, inc., u.s.a. and licensed for use by rfmd. all other trade names, trademarks and registered tradem arks are the property of their respective owners. ?2012, rf micro devices, inc. product description 7628 thorndike road, greensboro, nc 27409-9421 for sales or technical support, contact rfmd at (+1) 336-678-5570 or customerservice@rfmd.com . ordering information bifet hbt rf in pin 2,3 rf out / vds pin 6,7 gnd base vgs pin 1 rfha1003 30mhz to 512mhz, 9w gan wideband power amplifier the rfha1003 is a wideband power amplifier designed for cw and pulsed applica- tions such as wireless infrastructure, radar, two way radios and general purpose amplification. using an advanced high power density gallium nitride (gan) semi- conductor process, these high-performance amplifiers achieve high efficiency, flat gain, and large instantaneous bandwidth in a single amplifier design. the rfha1003 is an input matched gan transistor packaged in an air cavity ceramic package which provides excellent therma l stability through the use of advanced heat sink and power dissipation technolo gies. ease of integration is accomplished through the incorporation of optimized input matching network within the package that provides wideband gain and power performance in a single amplifier. an exter- nal output match offers the flexibility of further optimizing power and efficiency for any sub-band within the overall bandwidth. features ? advanced gan hemt technology ? output power of 9w ? advanced heat-sink technology ? 30mhz to 512mhz instantaneous bandwidth ? input internally matched to 50 ? ? 28v operation typical performance ? output power 39.5dbm ? gain 19db ? power added efficiency 70% ? -40c to 85c operating temperature ? large signal models available applications ? pre-driver for multiband wireless infrastructure transmitters ? class ab operation for public mobile radio ? power amplifier stage for commercial wireless infrastructure ? general purpose tx amplification ? test instrumentation ? civilian and military radar ds120216 ? package: aln leadless chip carrier / so8 rfha1003 30mhz to 512mhz, 9w gan wide- band power amplifier rfha1003s2 2-piece sample bag rfha1003sb 5-piece bag rfha1003sq 25-piece bag rfha1003sr 100 pieces on 7? short reel rfha1003tr7 750 pieces on 7? reel rfha1003pcba-410 fully assembled evaluation board 30mhz to 512mhz; 28v operation
2 of 11 rfha1003 ds120216 7628 thorndike road, greensboro, nc 27409-9421 for sales or technical support, contact rfmd at (+1) 336-678-5570 or customerservice@rfmd.com . absolute maximum ratings parameter rating unit drain voltage (v d )150v gate voltage (v g )-8 to +2v gate current (i g )5ma operational voltage 32 v rf- input power 27 dbm ruggedness (vswr) 12:1 storage temperature range -55 to +125 c operating temperature range (t l ) -40 to +85 c operating junction temperature (t j )200c human body model class 1c mttf (t j < 200c, 95% confidence limits)* 3 x 10 6 hours thermal resistance, r th (junction to case) measured at t c = 85c, dc bias only 9.8 c/w * mttf - median time to failure for wear-out failure mode (30% i dss degradation) which is determined by the technology process reliability. refer to product qualification report for fit(random) failure rate. operation of this device beyond any one of these limits may ca use permanent damage. for reliable continuous operation, the devi ce voltage and current must not exceed the maximum operating values specified in the table on page two. bias conditions should also satisfy the following expression: p diss < (t j - t c )/r th j - c and t c = t case parameter specification unit condition min. typ. max. recommended operating conditions drain voltage (v dsq )2832v gate voltage (v gsq ) -5-3-2 v drain bias current 55 ma rf input power (p in )25dbm input source vswr 10:1 rf performance characteristics frequency range 30 512 mhz small signal 3db bandwidth linear gain 19 db p out = 30dbm, 100mhz power gain 16 db p3db, 100mhz gain flatness 2 db p out = 30dbm, 30mhz to 2500mhz gain variation with temperature -0.02 db/c input return loss (s 11 )-10db output power (p 3db ) 39.5 dbm 30mhz to 512mhz power added efficiency (pae) 70 % 30mhz to 512mhz caution! esd sensitive device. exceeding any one or a combination of the absolute maximum rating conditions may cause permanent damage to the device. ex tended application of absolute maximum rating conditions to the device may reduce device reliability. specified typical perfor- mance or functional operation of the devi ce under absolute maximum rating condi- tions is not implied. the information in this publication is believed to be accurate and reliable. however, no responsibility is assumed by rf micro devices, inc. ("rfmd") for its use, nor for any infringement of patents, or other rights of third parties, resulting from its use. no license is granted by implication or otherwise under any patent or patent rights of rfmd. rfmd reserves the right to change component circuitry, recommended appli- cation circuitry and specifications at any time without prior notice. rohs (restriction of hazardous subs tances): compliant per eu directive 2002/95/ec.
3 of 11 rfha1003 ds120216 7628 thorndike road, greensboro, nc 27409-9421 for sales or technical support, contact rfmd at (+1) 336-678-5570 or customerservice@rfmd.com . rf functional tests [1], [2] v gs(q) -3.0 v gain 18 18.5 db p in = 10dbm power gain 14.3 15.5 db p in = 25dbm input return loss -10 db output power 39 39.5 dbm power added efficiency (pae) 60 70 % [1] test conditions: v dsq = 28v, i dq = 55ma, cw, f = 300mhz, t = 25oc. [2] performance in a standard tuned test fixture. parameter specification unit condition min. typ. max.
4 of 11 rfha1003 ds120216 7628 thorndike road, greensboro, nc 27409-9421 for sales or technical support, contact rfmd at (+1) 336-678-5570 or customerservice@rfmd.com . typical performance in standard fixed tu ned test fixture matched for 30mhz to 512mhz (t = 25c, unless noted) 25 20 15 10 5 0 0 4 8 12 16 20 0 100 200 300 400 500 600 700 800 900 1000 magnitude,s 11 ,s 22 (db) magnitude,s 21 (db) frequency(mhz) smallsignalsparametersversusfrequency (v d =28v,i dq =55ma) s21 s11 s22 0 4 8 12 16 20 0 50 100 150 200 250 300 350 400 450 500 gain(db) frequency(mhz) gainversusfrequency,p in =25dbm (cw,v d =28v,i dq =55ma) 85c 25c 40c 85 c 25 c 40 c 0 20 40 60 80 100 0 50 100 150 200 250 300 350 400 450 500 poweraddedefficiency,pae(%) frequency(mhz) paeversusfrequency,p in =25dbm (cw,v d =28v,i dq =55ma) 85c 25c 40c 85 c 25 c 40 c 25 20 15 10 5 0 0 50 100 150 200 250 300 350 400 450 500 inputreturnloss,irl(db) frequency(mhz) inputreturnlossversusfrequency,p in =25dbm (cw,v d =28v,i dq =55ma) 85c 25c 40c 85 c 25 c 40 c 25 20 15 10 5 0 0 4 8 12 16 20 0 50 100 150 200 250 300 350 400 450 500 inputreturnloss(db) gain(db) frequency(mhz) gain/irlversusfrequency,p out =39.5dbm (cw,v d =28v,i dq =55ma) gain irl 30 40 50 60 70 80 90 0 50 100 150 200 250 300 350 400 450 500 poweraddedefficiency,pae(%) frequency(mhz) paeversusfrequency,p out =39.5dbm (cw,v d =28v,i dq =55ma)
5 of 11 rfha1003 ds120216 7628 thorndike road, greensboro, nc 27409-9421 for sales or technical support, contact rfmd at (+1) 336-678-5570 or customerservice@rfmd.com . typical performance in standard fixed tu ned test fixture matched for 30mhz to 512mhz (t = 25c, unless noted) 0 4 8 12 16 20 24 0 50 100 150 200 250 300 350 400 450 500 gain(db) frequency(mhz) gainversusfrequency (cw,v d =28v,i dq =55ma) pout=39.5dbm pout=35dbm pout=25dbm p out p out p out 0 20 40 60 80 100 0 50 100 150 200 250 300 350 400 450 500 poweraddedefficiency,pae(%) frequency(mhz) poweraddedefficiencyversusfrequency (cw,v d =28v,i dq =55ma) pout=39.5dbm pout=35dbm pout=25dbm p out p out p out 25 20 15 10 5 0 0 50 100 150 200 250 300 350 400 450 500 inputreturnloss,irl(db) frequency(mhz) inputreturnlossversusfrequency (cw,v d =28v,i dq =55ma) pout=39.5dbm pout=35dbm pout=25dbm p out p out p out 12 14 16 18 20 22 20 25 30 35 40 gain(db) p out ,outputpower(dbm) gainversusoutputpower (cw,v d =28v,i dq =55ma) freq=30mhz freq=300mhz freq=500mhz 0 20 40 60 80 100 20 25 30 35 40 poweraddedefficiency,pae(%) p out ,outputpower(dbm) poweraddedefficiencyversusoutputpower (cw,v d =28v,i dq =55ma) freq=30mhz freq=300mhz freq=500mhz 25 20 15 10 5 0 20 25 30 35 40 inputreturnloss,irl(db) p out ,outputpower(dbm) inputreturnlossversusoutputpower (cw,v d =28v,i dq =55ma) freq=30mhz freq=300mhz freq=500mhz
6 of 11 rfha1003 ds120216 7628 thorndike road, greensboro, nc 27409-9421 for sales or technical support, contact rfmd at (+1) 336-678-5570 or customerservice@rfmd.com . typical performance in standard fixed tu ned test fixture matched for 30mhz to 512mhz (t = 25c, unless noted) 70 60 50 40 30 20 10 0 0.1 1 10 100 intermodulationdistortion(imd dbc) p out ,outputpower(w pep) imdversusoutputpower (v d =28v,i dq =85ma,f1=449.5mhz,f2=450.5mhz) imd3 imd3 imd5 imd5 imd7 imd7 9 10 11 12 13 14 15 16 17 18 19 15 20 25 30 35 40 gain(db) p out ,outputpower(dbm) gainversusoutputpower (2tone1mhzseparation,v d =28v,i dq varied,fc=450mhz) 25ma 55ma 85ma 115ma 145ma 0 10 20 30 40 50 60 70 15 20 25 30 35 40 drainefficiency(%) p out ,outputpower(dbm) drainefficiencyversusoutputpower (2tone1mhzseparation,v d =28v,i dq varied,fc=450mhz) 25ma 55ma 85ma 115ma 145ma 40 35 30 25 20 15 10 0.1 1 10 100 imd3,intermodulationdistortion(dbc) p out ,outputpower(wpep) imd3versusoutputpower (2tone1mhzseparation,v d =28v,i dq varied,fc=450mhz) 25ma 55ma 85ma 115ma 145ma 0 5 10 15 20 25 0 102030405060708090100 powerdissipation(w) maximumcasetemperature( c) powerdissipationderatingcurve (basedonmaximumpackagetemperatureandr th )
7 of 11 rfha1003 ds120216 7628 thorndike road, greensboro, nc 27409-9421 for sales or technical support, contact rfmd at (+1) 336-678-5570 or customerservice@rfmd.com . package drawing (all dimensions in mm.) a123 : trace code 1234 : serial number package style: ceramic so8 pin names and descriptions pin name description 1vgs gate dc bias pin 2rf in rf input 3rf in rf input 4n/c no connect 5n/c no connect 6rf out/vds rf output / drain dc bias pin 7rf out/vds rf output / drain dc bias pin 8n/c no connect pkg base gnd ground
8 of 11 rfha1003 ds120216 7628 thorndike road, greensboro, nc 27409-9421 for sales or technical support, contact rfmd at (+1) 336-678-5570 or customerservice@rfmd.com . bias instruction for rfha1003 evaluation board esd sensitive material. please use proper esd precautions when handling device s of evaluation board. evaluation board requires additional external fan cooling. conne ct all supplies before powering evaluation board. 1. connect rf cables at rfin and rfout. 2. connect ground to the ground supply terminal, and ensure th at both the vg and vd grounds are also connected to this ground terminal. 3. apply -5v to vg. 4. apply 28v to vd. 5. increase v g until drain current reaches 55ma or desired bias point. 6. turn on the rf input. typical test data provided is measured to sma connector re ference plane, and include evaluation board / broadband bias network mismatch and losses.
9 of 11 rfha1003 ds120216 7628 thorndike road, greensboro, nc 27409-9421 for sales or technical support, contact rfmd at (+1) 336-678-5570 or customerservice@rfmd.com . evaluation board schematic evaluation board bill of materials (bom) component value manufacturer part number c1, c2 2400pf dielectric labs inc c08bl242x-5un-x0 c11 10000pf murata electronics grm188r71h103ka01d c15 10 ? f murata electronics GRM21BF51C106ZE15L c20 0.8pf atc 100a0r8bw150xt c25 4.7 ? f murata electronics grm55er72a475ka01l r11 0 ? panasonic erj-3gey0r00v l20 5.4nh coilcraft 0906-5_lb l21 0.9 ? hcoilcraft 1008af-901xjlc c21, r21 not used - - l21 c21 c1 c2 r11 c11 r21 l20 vg 1 rfin 2 rfin 3 n/c 4 n/c 5 rfout 6 rfout 7 n/c 8 gnd 9 u1 rfha1003 c20 50 microstrip 50 microstrip rf in rf out c15 c25 d v g v
10 of 11 rfha1003 ds120216 7628 thorndike road, greensboro, nc 27409-9421 for sales or technical support, contact rfmd at (+1) 336-678-5570 or customerservice@rfmd.com . evaluation board layout device impedances frequency (mhz) rfha1003pcba-410 (30mhz to 512mhz) z source ( ? ) z load ( ? ) 30 49.84-j1.61 45.86+j11.88 100 50.00-j1.36 49.11+j1.28 150 49.77-j1.68 48.20-j1.43 200 49.58-j2.22 46.77-j3.34 250 49.41-j2.71 44.97-j4.64 300 49.17-j3.06 42.97-j5.24 350 48.77-j3.50 40.74-5.48 400 48.44-j3.95 38.41-j5.24 450 48.07-j4.21 36.28-j4.57 512 47.45-j4.64 33.49-j3.34 note: device impedances reported are the measured evaluation board impedances chosen for a tradeoff of efficiency and peak powe r performance across the entire frequency bandwidth. p1 p2 p3
11 of 11 rfha1003 ds120216 7628 thorndike road, greensboro, nc 27409-9421 for sales or technical support, contact rfmd at (+1) 336-678-5570 or customerservice@rfmd.com . device handling/environmental conditions rfmd does not recommend operating this device with typical drai n voltage applied and the gate pinched off in a high humidity, high temperature environment. gan hemt devices are esd sensitive materials. please use pr oper esd precautions when handling devices or evaluation boards. dc bias the gan hemt device is a depletion mode high electron mobility transistor (hemt). at zero volts v gs the drain of the device is saturated and uncontrolled drain current will destroy the transistor. the gate voltage must be taken to a potential lower than the source voltage to pinch off the device prior to applying the drain voltage, taking care not to exceed the gate voltage maxi - mum limits. rfmd recommends applying v gs = -5v before applying any v ds . rf power transistor performance capabilities are determined by the applied quiescent drain current. this drain current can be adjusted to trade off power, linearity, and efficiency charac teristics of the device. the recommended quiescent drain current (i dq ) shown in the rf typical performance table is chosen to best represent the operational charac teristics for this device, con- sidering manufacturing variations and expected performance. th e user may choose alternate conditions for biasing this device based on performance tradeoffs. mounting and thermal considerations the thermal resistance provided as r th (junction to case) represents only the pack aged device thermal characteristics. this is measured using ir microscopy capturing the device under test temp erature at the hottest spot of the die. at the same time, the package temperature is measured using a thermocouple touching the backside of the die embedded in the device heat sink but sized to prevent the measurement system from impacting th e results. knowing the dissipated power at the time of the measurement, the thermal resistance is calculated. in order to achieve the advertised mttf, proper heat removal must be considered to maintain the junction at or below the max- imum of 200c. proper thermal design includes consideration of ambient temperature and the thermal resistance from ambi- ent to the back of the package including heat sinking syst ems and air flow mechanisms. incorporating the dissipated dc power, it is possible to calculate the junction temperature of the device

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